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2SD1260R Datasheet

  • 2SD1260R

  • TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C)...

  • 3頁

  • ETC

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Power Transistors
2SD1260, 2SD1260A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB0937 (2SB937) and 2SB0937A (2SB937A)
10.0鹵0.3
Unit: mm
8.5鹵0.2
6.0鹵0.5
3.4鹵0.3
1.0鹵0.1
q
q
q
High foward current transfer ratio h
FE
High-speed switching
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25藲C)
Ratings
60
80
60
80
5
4
2
35
1.3
150
鈥?5 to +150
Unit
V
1.5鹵0.1
s
Features
1.5max.
10.5min.
2.0
1.1max.
0.8鹵0.1
0.5max.
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD1260
2SD1260A
2SD1260
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
2.54鹵0.3
5.08鹵0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4鹵0.3
1.0鹵0.1
8.5鹵0.2
emitter voltage 2SD1260A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
V
A
A
W
10.0鹵0.3
6.0鹵0.3
1.5
鈥?.4
2.0
3.0
鈥?.2
4.4鹵0.5
0.8鹵0.1
2.54鹵0.3
R0.5
R0.5
1.1 max.
0 to 0.4
5.08鹵0.5
藲C
1
2
3
藲C
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SD1260
2SD1260A
2SD1260
2SD1260A
2SD1260
2SD1260A
1:Base
2:Collector
3:Emitter
N Type Package (DS)
(T
C
=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= 60V, I
E
= 0
V
CE
= 80V, I
B
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 2A
V
CE
= 4V, I
C
= 2A
I
C
= 2A, I
B
= 8mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 2A, I
B1
= 8mA, I
B2
= 鈥?mA,
V
CC
= 50V
20
0.5
4
1
C
min
typ
max
1
1
2
2
2
4.4鹵0.5
60
80
1000
1000
10000
2.8
2.5
14.7鹵0.5
+0.4
+0
Unit
mA
mA
mA
V
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE2
Rank classification
V
V
MHz
碌s
碌s
碌s
Internal Connection
Q
P
B
Rank
h
FE2
R
1000 to 2500 2000 to 5000 4000 to 10000
E
Note)The part numbers in the parenthesis
show conventional part number.
1

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