Power Transistors
2SD1254
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB931
10.0鹵0.3
1.5鹵0.1
8.5鹵0.2
6.0鹵0.5
3.4鹵0.3
Unit: mm
1.0鹵0.1
s
Features
q
q
q
q
1.5max.
1.1max.
Low collector to emitter saturation voltage V
CE(sat)
Satisfactory linearity of foward current transfer ratio h
FE
Large collector current I
C
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25藲C)
Ratings
130
80
7
6
3
30
1.3
150
鈥?5 to +150
Unit
V
10.5min.
2.0
0.8鹵0.1
0.5max.
2.54鹵0.3
5.08鹵0.5
1
2
3
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4鹵0.3
1.0鹵0.1
8.5鹵0.2
6.0鹵0.3
1.5
鈥?.4
A
2.0
3.0
鈥?.2
A
W
4.4鹵0.5
0.8鹵0.1
2.54鹵0.3
R0.5
R0.5
1.1 max.
0 to 0.4
5.08鹵0.5
藲C
藲C
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 100V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 0.5A
I
C
= 2A, I
B
= 0.1A
I
C
= 2A, I
B
= 0.1A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 0.5A, I
B1
= 50mA, I
B2
= 鈥?0mA,
V
CC
= 50V
30
0.5
2.5
0.15
80
45
60
260
0.5
1.5
V
V
MHz
碌s
碌s
碌s
min
typ
max
10
50
Unit
碌A
碌A
V
FE2
Rank classification
R
60 to 120
Q
90 to 180
P
130 to 260
Rank
h
FE2
4.4鹵0.5
14.7鹵0.5
V
10.0鹵0.3
V
+0.4
+0
1
1
2
3
