Power Transistors
2SD1250, 2SD1250A
Silicon NPN triple diffusion planar type
For power amplification
For TV vartical deflection output
10.0鹵0.3
1.5鹵0.1
8.5鹵0.2
6.0鹵0.5
3.4鹵0.3
Unit: mm
1.0鹵0.1
Complementary to 2SB928 and 2SB928A
s
Features
q
q
q
High forward current transfer ratio h
FE
which has satisfactory linearity
Low collector to emitter saturation voltage V
CE(sat)
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25藲C)
Ratings
200
200
150
180
6
3
2
30
1.3
150
鈥?5 to +150
Unit
V
1.5max.
1.1max.
10.5min.
2.0
0.8鹵0.1
0.5max.
2.54鹵0.3
5.08鹵0.5
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD1250
2SD1250A
2SD1250
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4鹵0.3
1.0鹵0.1
8.5鹵0.2
6.0鹵0.3
1.5
鈥?.4
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
2.0
3.0
鈥?.2
A
A
W
藲C
藲C
4.4鹵0.5
0.8鹵0.1
2.54鹵0.3
R0.5
R0.5
1.1 max.
0 to 0.4
5.08鹵0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
2SD1250
2SD1250A
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
Conditions
V
CB
= 200V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 500碌A(chǔ), I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 500碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 400mA
V
CE
= 10V, I
C
= 400mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
20
200
150
180
6
60
50
1
1
V
V
MHz
240
min
typ
max
50
50
Unit
碌A(chǔ)
碌A(chǔ)
V
V
V
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
*
h
FE1
Rank classification
Q
60 to 140
P
100 to 240
Rank
h
FE1
4.4鹵0.5
14.7鹵0.5
emitter voltage 2SD1250A
10.0鹵0.3
V
+0.4
+0
1
1
2
