Transistor
2SD1119
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
s
Features
2.6鹵0.1
4.5鹵0.1
1.6鹵0.2
1.5鹵0.1
q
q
q
Low collector to emitter saturation voltage V
CE(sat)
.
Satisfactory operation performances at high efficiency with the
low-voltage power supply.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.4max.
45擄
1.0
鈥?.2
+0.1
0.4鹵0.08
0.5鹵0.08
1.5鹵0.1
3.0鹵0.15
3
2
1
4.0
鈥?.20
0.4鹵0.04
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
(Ta=25藲C)
Ratings
40
25
7
5
3
Unit
V
V
V
A
A
W
藲C
藲C
1:Base
2:Collector
3:Emitter
EIAJ:SC鈥?2
Mini Power Type Package
marking
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
*
Marking symbol :
T
1
150
鈥?5 ~ +150
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 2A
*2
I
C
= 3A, I
B
=
0.1A
*2
150
50
*2
min
typ
max
0.1
2.5鹵0.1
+0.25
Unit
碌A(chǔ)
V
V
25
7
230
150
1
600
V
MHz
pF
V
CB
= 6V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
Pulse measurement
*1
h
FE1
Rank classification
Rank
h
FE1
Q
230 ~ 380
TQ
R
340 ~ 600
TR
Marking Symbol
1
1
2
