2SD1114
K
Silicon NPN Triple Diffused
High Voltage Switching, Igniter
Absolute Maximum Ratings
(Ta = 25擄C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol Rating Unit
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
P
C*1
Tj
Tstg
400
300
7
6
10
50
150
V
V
V
A
A
W
擄C
TO-220AB
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1
1. Base
2. Collector
(Flange)
3. Emitter
1
2 3
2
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鈥?5 to 擄C
+150
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Note: 1. Value at T
C
= 25擄C.
300
鈩?/div>
typ
150
鈩?/div>
typ
3
Electrical Characteristics
(Ta = 25擄C)
Item
Collector to base breakdown voltage
Collector to emitter sustain voltage
Symbol
Min
Typ
鈥?/div>
鈥?/div>
Max
鈥?/div>
鈥?/div>
Unit
V
V
Test condition
I
C
= 0.1 mA, I
E
= 0
I
C
= 4 A, PW = 50 碌s,
f = 50 Hz, L = 10 mH
I
E
= 50 mA, I
C
= 0
V
CE
= 300 V, R
BE
=
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V
(BR)CBO
400
V
CEO(sus)
300
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Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Turn on time
V
(BR)EBO
7
I
CEO
h
FE
V
CE(sat)
V
BE(sat)
t
on
鈥?/div>
500
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2.0
鈥?/div>
100
鈥?/div>
1.5
2.0
鈥?/div>
V
V
碌s
V
碌A
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V
CE
= 2 V, I
C
= 4 A
*1
I
C
= 4 A, I
B
= 40 mA
*1
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I
C
= 4 A,
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I
B1
= 鈥揑
B2
= 40 mA
Turn off time
t
off
鈥?/div>
23
鈥?/div>
碌s
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Note: 1. Pulse Test.
See characteristics curves of 2SD991
K
.
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