2SD1088
GENERAL DESCRIPTION
SILICON NPN TRIPLE DIFFUSED TRANSISTOR
High voltage switching application.
Igniter application.
QUICK REFERENCE DATA
SYMBOL
TO-220
CONDITIONS
V
BE
= 0V
MIN
MAX
300
250
6
30
UNIT
V
V
A
A
W
V
V
s
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
T
mb
25
-
-
-
-
-
-
I
F
= 4.5A
I
Csat
= 4.5A; f = 16KHz
-
LIMITING VALUES
SYMBOL
V
CESM
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0V
MIN
-
-
-
-
-
-55
-
MAX
300
250
6
1
30
150
150
UNIT
V
V
A
A
W
Tmb 25
ELECTRICAL CHARACTERISTICS
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE1
h
FE2
C
c
t
on
t
s
tf
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
DC current gain
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
VCB =300V; V
E
=0
VEB =5V, Ic =0
Ic =0.5A, L=40mH
I
C
= 4A; I
B
= 0.04A
I
C
= 4A, V
CE
= 2V
I
C
= 2A; V
CE
= 2V
V
CB
= 10V
MIN
-
-
250
-
200
2000
MAX
0.5
0.5
2..0
-
-
1
8
5
UNIT
mA
mA
V
V
pF
us
us
us
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
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