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2SD0973A Datasheet

  • 2SD0973A

  • For Low-Frequency Driver Amplification

  • 4頁

  • PANASONIC

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Transistors
2SD0973A
(2SD973A)
Silicon NPN epitaxial planar type
For low-frequency driver amplification
6.9
鹵0.1
Unit: mm
2.5
鹵0.1
(1.0)
(0.4)
2.0
鹵0.2
鈥?/div>
Low collector-emitter saturation voltage V
CE(sat)
鈥?/div>
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
(1.5)
3.5
鹵0.1
(1.0)
2.4
鹵0.2
0.45
鹵0.05
1
鈻?/div>
Features
(1.5)
R 0.9
R 0.7
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
*
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
60
50
5
1
1.5
1
150
鈭?5
to
+150
Unit
V
V
V
A
A
W
擄C
擄C
1.0
鹵0.1
(0.85)
3
(2.5)
2
(2.5)
1.25
鹵0.05
0.55
鹵0.1
1: Base
2: Collector
3: Emitter
M-A1 Package
Note) *: Printed circuit board: Copper foil area of 1 cm
2
or more, and the
board thickness of 1.7 mm for the collector portion
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1 *2
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
= 10 V, I
C
= 500 mA
V
CE
= 5 V, I
C
= 1 A
I
C
=
500 mA, I
B
=
50 mA
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
85
50
0.2
0.85
200
20
30
0.4
1.2
V
V
MHz
pF
Min
60
50
5
0.1
340
Typ
Max
Unit
V
V
V
碌A(chǔ)
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
Q
85 to 170
R
120 to 240
S
170 to 340
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2002
SJC00203CED
4.1
鹵0.2
4.5
鹵0.1
1

2SD0973A相關(guān)型號PDF文件下載

  • 型號
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    描述
    廠商
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  • 英文版
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  • 英文版
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  • 英文版
    For Low-Frequency And Low-Noise Amplification
    PANASONIC

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