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2SD0965 Datasheet

  • 2SD0965

  • Silicon NPN epitaxial planar type

  • 3頁

  • PANASONIC

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Transistors
2SD0965
(2SD965)
Silicon NPN epitaxial planar type
For low-frequency power amplification
For stroboscope
鈻?/div>
Features
鈥?/div>
Low collector-emitter saturation voltage V
CE(sat)
鈥?/div>
Satisfactory operation performances at high efficiency with the low-
voltage power supply.
0.7
鹵0.1
0.7
鹵0.2
Unit: mm
5.0
鹵0.2
5.1
鹵0.2
4.0
鹵0.2
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
40
20
7
5
8
750
150
鈭?5
to
+150
Unit
V
V
1
2 3
2.3
鹵0.2
12.9
鹵0.5
0.45
+0.15
鈥?.1
2.5
+0.6
鈥?.2
2.5
+0.6
鈥?.2
0.45
+0.15
鈥?.1
V
A
A
mW
擄C
擄C
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
2. *: Rank classification
Rank
h
FE1
Q
230 to 380
R
340 to 600
V
CE(sat)
f
T
C
ob
Conditions
I
C
=
1 mA, I
B
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CB
=
10 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
EB
=
7 V, I
C
=
0
V
CE
= 2 V, I
C
= 0.5 A
V
CE
= 2 V, I
C
= 1 A
I
C
=
3 A, I
B
=
0.1 A
V
CB
=
6 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
20 V, I
E
=
0, f
=
1 MHz
230
150
0.28
150
26
50
1.00
V
MHz
pF
Min
20
7
0.1
1
0.1
600
Typ
Max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2003
SJC00200BED
1

2SD0965相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    Transistor
  • 英文版
    Silicon NPN epitaxial planer type
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planer type
    PANASONIC ...
  • 英文版
    Silicon NPN epitaxial planer type
    PANASONIC
  • 英文版
    TRANSISTOR (NPN)
    金譽
  • 英文版
    Silicon NPN epitaxial planer type
    PANASONIC ...
  • 英文版
    For Medium-Power General Amplification
    PANASONIC
  • 英文版
    For Medium-Power General Amplification
    PANASONIC ...
  • 英文版
    Transistor
  • 英文版
    For High Breakdown Voltage General Amplification
    PANASONIC
  • 英文版
    For High Breakdown Voltage General Amplification
    PANASONIC ...
  • 英文版
    Silicon NPN epitaxial planer type(For high breakdown voltage...
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planer type(For high breakdown voltage...
    PANASONIC ...
  • 英文版
    Silicon NPN epitaxial planar type
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planar type
    PANASONIC ...
  • 英文版
    For Low-Frequency Power Amplification
    PANASONIC
  • 英文版
    For Low-Frequency Power Amplification
    PANASONIC ...
  • 英文版
    For Low-Frequency Amplification
    PANASONIC
  • 英文版
    For Low-Frequency Amplification
    PANASONIC ...
  • 英文版
    For Low-Frequency And Low-Noise Amplification
    PANASONIC

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