鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cut-off current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Noise voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
NV
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
CE
= 5 V, I
C
= 2 mA
I
C
=
20 mA, I
B
=
2 mA
V
CB
=
5 V, I
E
= 鈭?
mA, f
=
200 MHz
V
CE
= 40 V, I
C
= 1 mA, G
V
= 80 dB
R
g
= 100 k鈩? Function = FLAT
200
150
180
Min
120
120
7
100
1
700
0.6
Typ
Max
Unit
V
V
V
nA
碌A(chǔ)
錚?/div>
V
MHz
mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
R
180 to 360
S
260 to 520
T
360 to 700
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2002
SJC00199BED
4.1
鹵0.2
鈥?/div>
High collector-emitter voltage (Base open) V
CEO
鈥?/div>
Low noise voltage NV
鈥?/div>
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
R 0.9
R 0.7
2.0
鹵0.2
4.5
鹵0.1
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