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2SD0814A Datasheet

  • 2SD0814A

  • For High Breakdown Voltage Low-Frequency And Low-Noise

  • 3頁

  • PANASONIC

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Transistors
2SD0814A
(2SD814A)
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
鈻?/div>
Features
鈥?/div>
High collector-emitter voltage (Base open) V
CEO
鈥?/div>
Low noise voltage NV
鈥?/div>
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
1
2
0.40
+0.10
鈥?.05
3
Unit: mm
0.16
+0.10
鈥?.06
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
(0.95) (0.95)
1.9
鹵0.1
2.90
+0.20
鈥?.05
10藲
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
185
185
5
50
100
200
150
鈭?5
to
+150
Unit
V
V
V
mA
mA
mW
擄C
擄C
1.1
+0.2
鈥?.1
(0.65)
1.1
+0.3
鈥?.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol L
錛?/div>
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Noise voltage
Symbol
V
CEO
V
EBO
I
CBO
h
FE
V
CE(sat)
f
T
C
ob
NV
Conditions
I
C
=
100
碌A(chǔ),
I
B
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CB
=
100 V, I
E
=
0
V
CE
= 5 V, I
C
= 10 mA
I
C
=
30 mA, I
B
=
3 mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CE
= 10 V, I
C
= 1 mA, G
V
= 80 dB
R
g
= 100 k鈩? Function = FLAT
150
2.3
150
90
Min
185
5
1
330
1
Typ
Max
Unit
V
V
碌A(chǔ)
錚?/div>
V
MHz
pF
mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
90 to 155
R
130 to 220
S
185 to 330
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2003
SJC00196CED
0 to 0.1
0.4
鹵0.2
5藲
1

2SD0814A相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    Transistor
  • 英文版
    Silicon NPN epitaxial planer type
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planer type
    PANASONIC ...
  • 英文版
    Silicon NPN epitaxial planer type
    PANASONIC
  • 英文版
    TRANSISTOR (NPN)
    金譽
  • 英文版
    Silicon NPN epitaxial planer type
    PANASONIC ...
  • 英文版
    For Medium-Power General Amplification
    PANASONIC
  • 英文版
    For Medium-Power General Amplification
    PANASONIC ...
  • 英文版
    Transistor
  • 英文版
    For High Breakdown Voltage General Amplification
    PANASONIC
  • 英文版
    For High Breakdown Voltage General Amplification
    PANASONIC ...
  • 英文版
    Silicon NPN epitaxial planer type(For high breakdown voltage...
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planer type(For high breakdown voltage...
    PANASONIC ...
  • 英文版
    Silicon NPN epitaxial planar type
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planar type
    PANASONIC ...
  • 英文版
    For Low-Frequency Power Amplification
    PANASONIC
  • 英文版
    For Low-Frequency Power Amplification
    PANASONIC ...
  • 英文版
    For Low-Frequency Amplification
    PANASONIC
  • 英文版
    For Low-Frequency Amplification
    PANASONIC ...
  • 英文版
    For Low-Frequency And Low-Noise Amplification
    PANASONIC

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