鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Base-emitter saturation voltage
Forward current transfer ratio
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
f
T
C
ob
Conditions
I
C
=
10
碌A,
I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
碌A,
I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
20 V, I
B
=
0
V
CE
= 10 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 500 mA
I
C
=
300 mA, I
B
=
30 mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
85
40
90
0.35
200
6
15
0.6
V
MHz
pF
Min
30
25
7
0.1
1
340
Typ
Max
Unit
V
V
V
碌A
碌A
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
85 to 170
R
120 to 240
S
170 to 340
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2002
SJC00193BED
4.1
鹵0.2
鈥?/div>
Low collector-emitter saturation voltage V
CE(sat)
鈥?/div>
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
3.5
鹵0.1
鈻?/div>
Features
(1.0)
4.5
鹵0.1
R 0.9
R 0.7
1
1
2
3
