Transistor
2SC829
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
5.0鹵0.2
4.0鹵0.2
s
Features
q
Optimum for RF amplification, oscillation, mixing, and IF stage
of FM/AM radios.
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
30
20
5
30
400
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
13.5鹵0.5
5.1鹵0.2
0.45
鈥?.1
1.27
+0.2
0.45
鈥?.1
1.27
+0.2
1 2 3
2.3鹵0.2
2.54鹵0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO鈥?2
EIAJ:SC鈥?3A
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Transition frequency
Common emitter reverse transfer capacitance
Reverse transfer impedance
(Ta=25藲C)
Symbol
V
CBO
V
CEO
V
EBO
h
FE*
f
T
C
re
Z
rb
Conditions
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
C
= 1mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= 鈥?mA, f = 2MHz
min
30
20
5
70
150
230
1.3
1.6
60
250
MHz
pF
鈩?/div>
typ
max
Unit
V
V
V
*
h
FE
Rank classification
B
70 ~ 160
C
110 ~ 250
h
FE
Rank
1
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