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2SC6087 Datasheet

  • 2SC6087

  • Silicon NPN Epitaxial Type

  • 5頁

  • TOSHIBA

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2SC6087
TOSHIBA Transistor
Silicon NPN Epitaxial Type
2SC6087
Power Amplifier Applications
Power Switching Applications
Low collector emitter saturation voltage
: V
CE (sat)
= 0.5 V (max)錛圛
C
= 1A錛?/div>
High-speed switching: t
stg
= 0.4
渭s
(typ)
Unit: mm
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulse
Symbol
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
160
160
80
7
2.5
5.0
1.0
1.3
150
鈭?5錕?frac12;錕?50
Unit
V
V
V
V
A
A
A
W
擄C
擄C
1 : BASE
2 : COLLECTOR
3 : EMITTER
JEDEC
JEITA
TOSHIBA
Weight:0.55g(typ)
鈥?/div>
鈥?/div>
2-8M1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2007-06-07

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