鈥?/div>
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
High speed.
High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings
at Ta=25擄C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25擄C
Conditions
Ratings
1500
800
5
5
12
1.75
50
150
--55 to +150
Unit
V
V
V
A
A
W
W
擄C
擄C
Electrical Characteristics
at Ta=25擄C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
DC Current Gain
Fall Time
Symbol
ICBO
ICES
VCEO(sus)
IEBO
VCE(sat)
VBE(sat)
hFE1
hFE2
tf
Conditions
VCB=800V, IE=0A
VCE=1500V, RBE=0鈩?/div>
IC=100mA, IB=0A
VEB=4V, IC=0A
IC=2.7A, IB=0.54A
IC=2.7A, IB=0.54A
VCE=5V, IC=0.5A
VCE=5V, IC=3A
IC=1.8A, IB1=0.36A, IB2=--0.72A
10
5
7
0.2
碌s
800
1.0
3
1.5
Ratings
min
typ
max
10
1.0
Unit
碌A(chǔ)
mA
V
mA
V
V
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1306KC TI IM TB-00002398 No. A0630-1/4
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