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2SC6061 Datasheet

  • 2SC6061

  • Silicon NPN Epitaxial Type

  • 205.72KB

  • 5頁

  • TOSHIBA

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2SC6061
TOSHIBA Transistor
Silicon NPN Epitaxial Type
2SC6061
High-Speed Switching Applications
DC-DC Converter Applications
銉籋igh-DC
current gain: h
FE
= 120 to 300 (I
C
= 0.1 A)
0.95 0.95
2.9鹵0.2
1.9鹵0.2
Unit: mm
+0.2
2.8-0.3
+0.2
1.6-0.1
銉籐ow-collector-emitter
saturation: V
CE (sat)
= 0.14 V (max)
銉籋igh-speed
switching: t
f
= 0.2
渭s
(typ)
1
2
3
Characteristic
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (Note 1)
Base current
Collector power
dissipation (Note 2)
Junction temperature
Storage temperature range
t = 10s
DC
DC
Pulse
Symbol
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
180
150
120
7
1.0
2.0
0.1
1000
625
150
鈭?5
to 150
Unit
V
V
V
V
A
A
A
mW
mW
擄C
擄C
0.7鹵0.05
1. Base
2. Emitter
3. Collector
JEDEC
JEITA
TOSHIBA
0錕?frac12;錕?.1
鈥?/div>
鈥?/div>
2-3S1A
Weight: 0.01g (Typ.)
Note 1: Ensure that the channel temperature does not exceed 150擄C.
2
Note 2: Mounted on FR4 board (glass epoxy, 1.6mm thick, Cu area: 645 mm )
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-13
0.16鹵0.05
0.15
Absolute Maximum Ratings
(Ta = 25擄C)
0.4鹵0.1

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