錕?frac12;錕?/div>
錛︼譏
ITEM
ELECTRICAL CHARACTERISTICS
錛圱a=25鈩冿級
Parameter
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain band width product
錛婏細(xì) It shows h
FE
classification in right table.
Symbol
Test conditions
Limits
Min
Typ
Max
Unit
V
錛圔R錛塁EO
V
錛圔R錛塁BO
V
錛圔R錛塃BO
I
CBO
I
EBO
h
FE
*
V
CE錛坰at錛?/div>
fT
IC=100渭A銆丷BE=鈭?/div>
IC=10渭A銆両E=0
IE=10渭A銆両C=0
VCB=25V銆両E=0
VEB=2V銆両C=0
VCE=4V銆両C=100mA
IC=500mA銆両B=25mA
VCE=6V銆両E=-10mA
Item
hFE
E
20
25
4
1
1
150
0.3
290
F
250 to 500
0.4
V
V
V
渭A
渭A
---
V
MHz
G
400 to 800
800
0.5
150 to 300
ISAHAYA ELECTRONICS CORPORATION
next