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2SC6042 Datasheet

  • 2SC6042

  • Silicon NPN Triple Diffused Type

  • 5頁

  • TOSHIBA

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2SC6042
TOSHIBA Transistor
Silicon NPN Triple Diffused Type
2SC6042
High-Speed, High-Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
鈥?/div>
鈥?/div>
High-speed switching: t
f
= 0.2
渭s
(max) (I
C
= 0.3A)
High breakdown voltage: V
CES
= 800 V, V
CEO
= 375 V
Unit: mm
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25擄C
DC
Pulse
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
800
800
375
8
1.0
2.0
0.5
1.0
150
鈭?5
to 150
Unit
V
V
V
V
A
A
W
擄C
擄C
1. Base
2. Collector
3. Emitter
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-7D101A
Weight: 0.2 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-13

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