2SC6040
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6040
High-Speed and High-Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
鈥?/div>
鈥?/div>
High-speed switching: t
f
= 0.2 碌s (max) (I
C
= 0.3 A)
High breakdown voltage: V
CES
= 800 V, V
CEO
= 410 V
Unit: mm
Maximum Ratings
(Ta = 25擄C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25擄C
DC
Pulse
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
800
800
410
8
1.0
2.0
0.5
1.0
150
鈭?5
to 150
Unit
V
V
V
V
A
A
W
擄C
擄C
1. Base
2. Collector
3. Emitter
JEDEC
JEITA
TOSHIBA
Weight:
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鈥?/div>
2-7D101A
0.2 g (typ.)
1
2004-12-01
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