鈥?/div>
High DC current gain: h
FE
= 250 to 400 (I
C
= 0.3 A)
Low collector-emitter saturation: V
CE (sat)
= 0.18 V (max)
High-speed switching: t
f
= 38 ns (typ.)
1
2
3
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
t = 10s
DC
DC
Pulse
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CP
I
B
Pc (Note 1)
T
j
T
stg
100
80
50
6
2.5
5
0.3
1.00
0.625
150
鈭?5
to 150
V
V
V
V
A
A
W
擄C
擄C
2
1. Base
2. Emitter
3. Collector
JEDEC
JEITA
TOSHIBA
錛?/div>
錛?/div>
錛?/div>
2-3S1A
Weight: 0.01g (Typ.)
Note 1: Mounted on an FR4 board (glass epoxy, 1.6mm thick, Cu area: 64.5 mm )
1
0 錕?frac12;錕?0. 1
Characteristics
Symbol
Rating
Unit
0. 7鹵 0 .0 5
Maximum Ratings
(Ta = 25擄C)
2004-07-01
0. 16鹵 0 . 0 5
0 .1 5
0 . 4鹵 0. 1
+0.2
2.8-0.3
+0.2
1.6-0.1
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