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2SC6033_06 Datasheet

  • 2SC6033_06

  • Silicon NPN Epitaxial Type

  • 5頁(yè)

  • TOSHIBA

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2SC6033
TOSHIBA Transistor
Silicon NPN Epitaxial Type
2SC6033
Unit : mm
0. 4鹵 0 . 1
3
0 . 16鹵 0 . 0 5
0 .1 5
High-Speed Swtching Applications
DC-DC Converter Applications
Storobe Flash Applications
鈥?/div>
鈥?/div>
鈥?/div>
High DC current gain: h
FE
= 250 to 400 (I
C
= 0.3 A)
Low collector-emitter saturation: V
CE (sat)
= 0.18 V (max)
High-speed switching: t
f
= 38 ns (typ.)
錛達(dá)汲錛?/div>
+0.2
2.8-0.3
+0.2
1.6-0.1
0 .9 5 0 . 9 5
2. 9鹵 0 . 2
1 . 9鹵 0 . 2
1
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
t = 10s
DC
DC
Pulse
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
(Note 1)
T
j
T
stg
100
80
50
6
2.5
5
0.3
1.00
0.625
150
鈭?5
to 150
V
V
V
V
A
A
W
擄C
擄C
1. Base
2. Emitter
3. Collector
JEDEC
JEITA
TOSHIBA
錛?/div>
錛?/div>
錛?/div>
2-3S1A
Weight: 0.01g (Typ.)
Note 1: Mounted on an FR4 board (glass epoxy, 1.6mm thick, Cu area: 64.5 mm
2
)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
0錕?frac12;錕?0 . 1
Characteristics
Symbol
Rating
Unit
0. 7鹵 0 . 0 5
Absolute Maximum Ratings
(Ta = 25擄C)
2006-11-13

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