鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Storage time
Fall time
Symbol
V
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
t
on
t
stg
t
f
Conditions
I
C
=
10 mA, I
B
=
0
V
CB
=
180 V, I
E
=
0
V
EB
=
6 V, I
C
=
0
V
CE
= 5 V, I
C
= 0.1 A
I
C
=
1 A, I
B
=
0.1 A
V
CE
=
10 V, I
C
=
0.2 A, f
=
10 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
I
C
=
0.4 A, Resistance loaded
I
B1
=
0.04 A, I
B2
= 鈭?/div>
0.04 A
V
CC
=
100 V
130
10
0.1
1.5
0.1
60
Min
180
100
100
240
0.5
Typ
Max
Unit
V
碌A
碌A
錚?/div>
V
MHz
pF
碌s
碌s
碌s
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
60 to 140
P
120 to 240
Publication date: July 2004
SJD00320AED
1
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2
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