鈥?/div>
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
High breakdown voltage and high reliability.
High-speed switching.
Wide ASO.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings
at Ta=25擄C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
PW鈮?00碌s, duty cycle鈮?0%
Conditions
Ratings
500
400
7
10
20
3.5
1.75
Tc=25擄C
50
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
擄C
擄C
Electrical Characteristics
at Ta=25擄C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
hFE3
Rank
hFE
M
20 to 40
Conditions
VCB=400V, IE=0A
VEB=5V, IC=0A
VCE=5V, IC=1.2A
VCE=5V, IC=6A
VCE=5V, IC=1mA
20*
10
10
Ratings
min
typ
max
10
10
40*
Unit
碌A(chǔ)
碌A(chǔ)
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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2005KB MS IM TB-00001787 No.A0152-1/4
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