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2SC5939G Datasheet

  • 2SC5939G

  • Small Signal Bipolar Transistor, 0.05A I(C), 10V V(BR)CEO, 1...

  • 3頁

  • PANASONIC

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Transistors
2SC5939
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
0.33
+0.05
鈥?.02
Unit: mm
0.10
+0.05
鈥?.02
鈻?/div>
Features
鈥?/div>
High transition frequency f
T
鈥?/div>
Small collector output capacitance (Common base, input open cir-
cuited) C
ob
and reverse transfer capacitance (Common base) C
rb
鈥?/div>
SSS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
3
0.15 min.
0.80
鹵0.05
1.20
鹵0.05
0.52
鹵0.03
0 to 0.01
5藲
(0.40) (0.40)
0.80
鹵0.05
1.20
鹵0.05
5藲
0.15 min.
0.23
+0.05
鈥?.02
1
2
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
15
10
3
50
100
125
鈭?5
to
+125
Unit
V
V
V
mA
mW
擄C
擄C
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
Marking Symbol: 1S
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
h
FE
ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Reverse transfer capacitance
(Common base)
Collector-base parameter
Symbol
V
CEO
V
EBO
I
CBO
h
FE
鈭唄
FE
V
CE(sat)
f
T
C
ob
C
rb
r
bb
' 鈥?C
C
Conditions
I
C
=
2 mA, I
B
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CB
=
10 V, I
E
=
0
V
CE
=
4 V, I
C
=
5 mA
V
CE
=
4 V, I
C
=
100
碌A(chǔ)
V
CE
=
4 V, I
C
=
5 mA
I
C
=
20 mA, I
B
=
4 mA
V
CE
=
4 V, I
E
= 鈭?
mA, f
=
200 MHz
V
CB
=
4 V, I
E
=
0, f
=
1 MHz
V
CB
=
4 V, I
E
=
0, f
=
1 MHz
V
CB
=
4 V, I
E
= 鈭?
mA, f
=
31.9 MHz
1.4
1.9
1.4
0.45
11
0.5
2.7
V
GHz
pF
pF
ps
75
0.75
Min
10
3
1
400
1.6
Typ
Max
Unit
V
V
碌A(chǔ)
錚?/div>
錚?/div>
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.15 max.
Publication date: April 2004
SJC00306AED
1

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