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2SC5935P Datasheet

  • 2SC5935P

  • Panasonic Semiconductor [Silicon NPN triple diffusion plana...

  • PANASONIC

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Power Transistors
2SC5935
Silicon NPN triple diffusion planar type
For power amplification
For TV vertical deflection output
鈻?/div>
Features
鈥?/div>
Satisfactory linearity of forward current transfer ratio h
FE
鈥?/div>
Dielectric breakdown voltage of the package: 5 kV
鈥?/div>
Full-pack package which can be installed to the heat sink with one
screw.
9.9
鹵0.3
Unit: mm
4.6
鹵0.2
2.9
鹵0.2
13.7
鹵0.2
4.2
鹵0.2
Solder Dip
15.0
鹵0.5
蠁
3.2
鹵0.1
1.4
鹵0.2
1.6
鹵0.2
0.8
鹵0.1
3.0
鹵0.5
2.6
鹵0.1
鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
T
a
=
25擄C
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
200
180
6
2
3
25
2.0
150
鈭?5
to
+150
擄C
擄C
Unit
V
V
V
A
A
W
0.55
鹵0.15
2.54
鹵0.30
5.08
鹵0.50
1
2
3
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CBO
V
CEO
V
EBO
V
BE
I
CBO
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
f
T
Conditions
I
C
=
50
碌A(chǔ),
I
E
=
0
I
C
=
5 mA, I
B
=
0
I
E
=
500
碌A(chǔ),
I
C
=
0
V
CE
=
10 V, I
C
=
400 mA
V
CB
=
200 V, I
E
=
0
V
EB
=
4 V, I
C
=
0
V
CE
=
10 V, I
C
=
150 mA
V
CE
=
10 V, I
C
=
400 mA
I
C
=
500 mA, I
B
=
50 mA
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
20
60
50
1
V
MHz
Min
200
180
6
1
50
50
240
Typ
Max
Unit
V
V
V
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
60 to 140
P
100 to 240
Publication date: July 2004
SJD00318AED
1

2SC5935P相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
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    描述
    廠商
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  • 英文版
    TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 600MA I(C) | TO-39
    ETC
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    High Voltage Transistors
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  • 英文版
    TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1.5A I(C) | TO-39
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-39
    ETC
  • 英文版
    Silicon NPN Power Transistors
    ISC [Incha...
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-37
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1.5A I(C) | TO-37VA...
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-37VAR
    ETC
  • 英文版
    ETC [High Voltage Transistors]
    ETC
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    Silicon NPN Triple Diffused
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    江蘇長電
  • 英文版
    TRANSISTOR | BJT | NPN | 100MA I(C) | TO-106VAR
    ETC

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