鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25擄C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
80
60
6
3
6
15
2.0
150
鈭?5
to
+150
擄C
擄C
Unit
V
V
V
A
A
W
18.0
鹵0.5
Solder Dip
0.65
鹵0.1
0.65
鹵0.1
0.35
鹵0.1
1.05
鹵0.1
0.55
鹵0.1
2.5
鹵0.2
2.5
鹵0.2
1 2 3
0.55
鹵0.1
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Internal Connection
C
B
E
Note) *: Non-repetitive peak collector current
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1
Symbol
V
CEO
I
CBO
I
CEO
I
EBO
h
FE1 *2
h
FE2
Collector-emitter saturation voltage
Turn-on time
Storage time
Fall time
V
CE(sat)
t
on
t
stg
t
f
Conditions
I
C
= 10 mA, I
B
= 0
V
CB
=
80 V, I
E
=
0
V
CE
=
40 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
4 V, I
C
=
0.5 A
V
CE
=
4 V, I
C
=
3 A
I
C
=
1 A, I
B
=
20 mA
I
C
=
1 A, Resistance loaded
I
B1
=
0.1 A, I
B2
= 鈭?/div>
0.1 A
V
CC
=
50 V
0.2
1.5
0.1
500
100
0.7
V
碌s
碌s
碌s
Min
60
100
100
100
2 300
Typ
Max
Unit
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
Q
500 to 1 500
P
1 300 to 2 300
Publication date: November 2004
SJD00326AED
1
1
2
