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2SC5896 Datasheet

  • 2SC5896

  • Panasonic Semiconductor [Silicon NPN epitaxial planar type]

  • PANASONIC

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Power Transistors
2SC5896
Silicon NPN epitaxial planar type
Unit: mm
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
鈻?/div>
Features
鈥?/div>
High-speed switching (t
stg
: storage time/t
f
: fall time is short)
鈥?/div>
Low collector-emitter saturation voltage V
CE(sat)
鈥?/div>
Superior forward current transfer ratio h
FE
linearity
鈥?/div>
TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
9.9
鹵0.3
3.0
鹵0.5
4.6
鹵0.2
2.9
鹵0.2
13.7
鹵0.2
4.2
鹵0.2
Solder Dip
15.0
鹵0.5
蠁
3.2
鹵0.1
1.4
鹵0.2
1.6
鹵0.2
0.8
鹵0.1
2.6
鹵0.1
0.55
鹵0.15
鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
1
2
2.54
鹵0.30
5.08
鹵0.50
3
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
T
C
=
25擄C
T
a
=
25擄C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
60
60
6
3
5
15
2
150
鈭?5
to
+150
Unit
V
V
V
A
A
W
B
擄C
擄C
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Marking Symbol: C5896
Internal Connection
C
E
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Symbol
V
CEO
I
CBO
I
CEO
h
FE1
h
FE2
h
FE3
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
I
C
=
10 mA, I
B
=
0
V
CB
=
60 V, I
E
=
0
V
CE
=
60 V, I
B
=
0
V
CE
=
4 V, I
C
=
0.2 A
V
CE
=
4 V, I
C
=
1 A
V
CE
=
4 V, I
C
=
3 A
I
C
=
3 A, I
B
=
0.375 A
V
CE
=
10 V, I
C
=
0.1 A, f
=
10 MHz
I
C
=
1 A, Resistance loaded
I
B1
=
0.1 A, I
B2
= 鈭?/div>
0.1 A
V
CC
=
50 V
100
0.2
0.75
0.15
60
80
30
0.6
250
Min
60
100
100
Typ
Max
Unit
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
錚?/div>
錚?/div>
V
MHz
碌s
碌s
碌s
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
SJD00300AED
1

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