2SC5875
Transistors
Power transistor (30V,
2A)
2SC5875
!
Features
1) High speed switching.
(Tf : Typ. : 20ns at I
C
= 2A)
2) Low saturation voltage, typically
(Typ. : 200mV at I
C
= 1.0A, I
B
= 0.1A)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2087
!
External dimensions
(Unit : mm)
ATV
6.8
2.5
0.65Max.
1.0
0.5
2.54 2.54
0.9
(1) (2) (3)
(1) Emitter
(2) Collector
(3) Base
1.05
14.5
4.4
0.45
Taping specifications
Symbol : C5875
!Applications
Low frequency amplifier
High speed switching
!
Structure
NPN Silicon epitaxial planar transistor
!
Packaging specifications
Package
Type
Taping
TV2
2500
Code
Basic ordering unit (pieces)
2SC5875
!
Absolute maximum ratings
(Ta=25擄C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
DC
I
C
I
CP
P
C
Limits
30
30
6
2
4
1.0
150
鈭?5
to 150
Unit
V
V
V
A
A
W
擄C
擄C
鈭?/div>
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
鈭桺w=10ms
Pulsed
Tj
Tstg
1/3
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