2SC5873S
Transistors
Medium power transistor (30V,
0.5A)
2SC5873S
Features
1) High speed switching.
(Tf : Typ. : 50ns at I
C
= 500mA)
2) Low saturation voltage, typically
(Typ. : 150mV at I
C
= 100mA, I
B
= 10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2085S
External dimensions
(Unit : mm)
SPT
3.0
(15min.)
4.0
2.0
3min.
0.45
2.5
5.0
0.5
0.45
(1) Emitter
(2) Collector
(3) Base
(1) (2) (3)
Taping specifications
Symbol :
C5873S
Applications
Small signal low frequency amplifier
High speed switching
Structure
NPN Silicon epitaxial planar transistor
Packaging specifications
Package
Type
Taping
TP
5000
Code
Basic ordering unit (pieces)
2SC5873S
Absolute maximum ratings
(Ta=25擄C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
DC
I
C
I
CP
P
C
Limits
30
30
6
0.5
1.0
300
150
鈭?5
to 150
Unit
V
V
V
A
A
mW
擄C
擄C
鈭?/div>
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
鈭桺w=10ms
Pulsed
Tj
Tstg
Rev.A
1/3
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