鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Collector output capacitance
(Common base, input open circuited)
Transition frequency
Symbol
V
CEO
V
EBO
I
CEO
h
FE
V
CE(sat)
C
ob
f
T
Conditions
I
C
=
100
碌A,
I
B
=
0
I
E
=
1
碌A,
I
C
=
0
V
CE
=
120 V, I
B
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
50 mA, I
B
=
5 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
50
80
60
Min
300
7
1
220
1.2
10
Typ
Max
Unit
V
V
碌A
錚?/div>
V
pF
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
60 to 150
R
100 to 220
0 to 0.1
Publication date: November 2002
SJC00290AED
0.4
鹵0.2
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