鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Collector output capacitance
(Common base, input open circuited)
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
C
ob
f
T
Conditions
I
C
=
10
碌螒,
I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
碌螒,
I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
=
10 V, I
C
=
2 mA
I
C
=
100 mA, I
B
=
10 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CB
=
10 V, I
E
= 鈭?
mA, f = 200 MHz
180
0.1
2.2
100
Min
60
50
7
0.1
100
390
0.3
Typ
Max
Unit
V
V
V
碌A
碌A
錚?/div>
V
pF
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.15 max.
Publication date: August 2003
SJC00298AED
1
1
2
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