鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
1
2
2.54
鹵0.30
5.08
鹵0.50
3
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
T
C
=
25擄C
T
a
=
25擄C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
80
80
5
3
5
15
2
150
鈭?5
to
+150
Unit
V
V
V
A
A
W
B
擄C
擄C
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Marking Symbol: C5840
Internal Connection
C
E
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Symbol
V
CEO
I
CBO
I
CEO
h
FE1
h
FE2
h
FE3
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
I
C
=
10 mA, I
B
=
0
V
CB
=
80 V, I
E
=
0
V
CE
=
80 V, I
B
=
0
V
CE
=
4 V, I
C
=
0.2 A
V
CE
=
4 V, I
C
=
1 A
V
CE
=
4 V, I
C
=
3 A
I
C
=
3 A, I
B
=
0.375 A
V
CE
=
10 V, I
C
=
0.1 A, f
=
10 MHz
I
C
=
1 A, Resistance loaded
I
B1
=
0.1 A, I
B2
= 鈭?/div>
0.1 A
V
CC
=
50 V
100
0.2
0.9
0.15
50
80
20
0.7
V
MHz
碌s
碌s
碌s
280
Min
80
100
100
Typ
Max
Unit
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
SJD00297AED
1
1
2
3
