鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
9
6
2
30
100
125
鈭?5
to
+125
Unit
V
V
V
mA
mW
擄C
擄C
3
0.65
鹵0.01
2
0.05
鹵0.03
1: Base
2: Emitter
3: Collector
ML3-N2 Package
Marking Symbol: 1N
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency
Forward transfer gain
Noise figure
Collector output capacitance
(Common base, input open circuited)
Symbol
I
CBO
I
EBO
h
FE
f
T
錚
21e
錚?/div>
2
NF
C
ob
Conditions
V
CB
=
5 V, I
E
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
3 V, I
C
=
10 mA
V
CE
=
3 V, I
C
=
10 mA, f
=
1.5 GHz
V
CE
=
0.3 V, I
C
=
1 mA, f
=
0.9 GHz
V
CE
=
0.3 V, I
C
=
1 mA, f
=
0.9 GHz
V
CB
=
3 V, I
E
=
0, f
=
1 MHz
40
100
10
6.5
1.7
0.4
0.7
Min
Typ
Max
1
1
160
Unit
碌A(chǔ)
碌A(chǔ)
錚?/div>
GHz
dB
dB
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
SJC00289AED
1
1
2
3
