鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Forward transfer gain
Noise figure
Maximum unilateral power gain
Collector output capacitance
(Common base, input open circuited)
Transition frequency
Symbol
V
CBO
V
CEO
I
CBO
I
EBO
h
FE
錚
21e
錚?/div>
2
NF
G
UM
C
ob
f
T
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
=
100
碌A(chǔ),
I
B
=
0
V
CB
=
10 V, I
E
=
0
V
EB
=
2 V, I
C
=
0
V
CE
=
8 V, I
C
=
20 mA
V
CE
=
8 V, I
C
=
20 mA, f
=
800 MHz
V
CE
=
8 V, I
C
=
20 mA, f
=
800 MHz
V
CE
=
8 V, I
C
=
20 mA, f
=
800 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CE
=
8 V, I
C
=
20 mA, f
=
800 MHz
5.0
110
7.5
10.0
1.7
11.5
0.9
6.0
1.2
Min
15
10
1
1
250
Typ
Max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
dB
dB
dB
pF
GHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
SJC00288AED
1
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