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2SC5813 Datasheet

  • 2SC5813

  • Mini3-G1

  • panasonic

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Transistors
2SC5813
Silicon NPN epitaxial planar type
For DC-DC converter
鈻?/div>
Features
鈥?/div>
Low collector-emitter saturation voltage V
CE(sat)
鈥?/div>
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
1
0.40
+0.10
鈥?.05
3
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
Unit: mm
0.16
+0.10
鈥?.06
2
(0.65)
(0.95) (0.95)
1.9
鹵0.1
2.90
+0.20
鈥?.05
10藲
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
*
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
80
80
5
1.5
3
600
150
鈭?5
to
+150
Unit
V
V
V
A
A
mW
擄C
擄C
1.1
+0.2
鈥?.1
1.1
+0.3
鈥?.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: 5H
Note) *: Measure on the ceramic substrate at 15 mm
脳
15 mm
脳
0.6 mm
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
*
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CB
=
40 V, I
E
=
0
V
CE
=
2 V, I
C
=
100 mA
I
C
=
1 A, I
B
= 20
mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
200
350
180
15
25
500
Min
80
80
5
0.1
Typ
Max
Unit
V
V
V
碌A(chǔ)
錚?/div>
mV
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
0 to 0.1
0.4
鹵0.2
5藲
Publication date: December 2002
SJC00285BED
1

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