Notics:This is not a final specification.
Some parametric limits are subject to change. 鈥?/div>
DESCRIPTION
鈥?SC5789 is a ultra super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for high frequency application.
Since it is a super-thin flat lead type package,a high-density
鈥僲ounting are possible.
0.4
鈶?/div>
鈶?/div>
鈶?/div>
0.2
0.8
0.2
2SC5789
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
Unit
錛氾拷½錕斤拷½錕?/div>
鈼?Super-thin flat lead type package.
t=0.45mm
鈼?High gain bandwidth product.
0.45
fT=12.0GHz
鈼廐igh gain, low noise.
鈼廋an operate at low voltage.
APPLICATION
For TV tuners, high frequency amplifier , celluar phone system.
0.4
FEATURE
1.2
0.8
JEITA
錛?/div>
TERMINAL CONNECTER
鈶?/div>
錛欱ASE
MAXIMUM RATINGS
錛圱a=25鈩冿級
Symbol
V
CBO
V
CEO
V
EBO
I
O
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
15
6
1.5
50
Unit
V
V
V
mA
mW
鈶?/div>
錛欵MITTER
鈶?/div>
錛欳OLLECTOR
P
c
T
j
T
stg
錛?25
-55鈭鹼紜125
鈩?/div>
鈩?/div>
ELECTRICAL CHARACTERISTICS
錛圱a=25鈩?/div>
錛?/div>
Parameter
Collector cut off current
Emitter cut off current
DC forward current gain
Gain bandwidth product
Collector output capacitance
Insertion power gain
Noise figure
Symbol
I
CBO
I
EBO
hFE
fT
Cob
|S
21
|
2
NF
V
V
V
V
V
V
V
CB
EB
Test conditions
=10V, I
E
=0mA
0.25
Limits
Min
-
-
鈥?0
-
-
10.0
-
Typ
-
-
-
12.0
0.7
13.0
1.2
Max
1.0
1.0
250
-
-
-
-
GHz
pF
dB
dB
Unit
渭A
渭A
=1V, I
C
=0mA
=5V, I
C
=10mA
=5V, I
E
=10mA
=5V, I
E
=0mA,f=1MHz
CE
CE
CB
CE
=5V, I
C
=10mA,f=1GHz
=5V, I
C
=5mA,f=1GHz
CE
ISAHAYA
鈥僂LECTRONICS鈥僀ORPORATION
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