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2SC5788 Datasheet

  • 2SC5788

  • Silicon NPN epitaxial planar type

  • 3頁

  • PANASONIC

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Power Transistors
2SC5788
Silicon NPN epitaxial planar type
Unit: mm
4.2
鹵0.2
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
鈻?/div>
Features
鈥?/div>
High-speed switching (t
stg
: storage time/t
f
: fall time is short)
鈥?/div>
Low collector to emitter saturation voltage V
CE(sat)
鈥?/div>
Superior forward current transfer ratio h
FE
linearity
鈥?/div>
Allowing automatic insertion with radial taping
18.0
鹵0.5
Solder Dip
10.0
鹵0.2
1.0
鹵0.2
5.0
鹵0.1
13.0
鹵0.2
2.5
鹵0.1
1.2
鹵0.1
1.48
鹵0.2
90藲
C 1.0
2.25
鹵0.2
0.65
鹵0.1
0.65
鹵0.1
0.35
鹵0.1
1.05
鹵0.1
0.55
鹵0.1
0.55
鹵0.1
鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
T
C
=
25擄C
T
a
=
25擄C
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
60
60
6
3
6
15
2
150
鈭?5 鈭?+150
擄C
擄C
Unit
V
V
V
A
A
W
2.5
鹵0.2
2.5
鹵0.2
1 2 3
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Marking Symbol: C5788
Internal Connection
C
B
E
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
I
CBO
I
CEO
I
EBO
h
FE1*
h
FE2
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
I
C
=
10 mA, I
B
=
0
V
CB
=
60 V, I
E
=
0
V
CE
=
60 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
4 V, I
C
=
1 A
V
CE
=
4 V, I
C
=
3 A
I
C
=
3 A, I
B
=
375 mA
V
CE
=
10 V, I
C
=
0.1 A, f
=
10 MHz
I
C
=
1 A, Resistance loaded
I
B1
=
0.1 A, I
B2
= 鈭?/div>
0.1 A
V
CC
=
50 V
180
0.2
0.55
0.1
0.3
0.7
0.15
120
40
0.8
V
MHz
碌s
碌s
碌s
Min
60
100
100
1
320
Typ
Max
Unit
V
碌A(chǔ)
碌A(chǔ)
mA
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
P
160 to 320
Q
120 to 250
Publication date: November 2002
SJD00290AED
1

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