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2SC5787 Datasheet

  • 2SC5787

  • BJT

  • 8頁(yè)

  • ETC

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NPN SILICON TRANSISTOR NE894M13
FEATURES
鈥?/div>
NEW MINIATURE M13 PACKAGE:
鈥?Small transistor outline
鈥?1.0 X 0.5 X 0.5 mm
鈥?Low profile / 0.50 mm package height
鈥?Flat lead style for better RF performance
IDEAL FOR > 3 GHz OSCILLATORS
LOW NOISE, HIGH GAIN
LOW C
re
UHSO 25 GHz PROCESS
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M13
+0.1
0.5 鈥?.05
+0.1
0.15 鈥?.05
1
0.35
0.3
2
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
E7
1
+0.1
1.0 鈥?.05
3
0.7
0.35
2
+0.1
0.15 鈥?.05
0.2
3
+0.1
0.2 鈥?.05
0.1
0.1
DESCRIPTION
The NE894M13 transistor is designed for oscillator applica-
tions above 3 GHz. The NE894M13 features low voltage, low
current operation, low noise, and high gain. NEC's new low
profile/flat lead style "M13" package is ideal for today's portable
wireless applications.
0.5鹵0.05
+0.1
0.125 鈥?.05
0.2
Bottom View
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
EIAJ
1
REGISTERED
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
GHz
dB
dB
pF
nA
nA
MIN
17
11
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
50
NE894M13
2SC5787
M13
TYP
20
13
1.4
0.22
鈥?/div>
鈥?/div>
鈥?/div>
MAX
鈥?/div>
鈥?/div>
2.5
0.30
100
100
100
SYMBOLS
f
T
|S
21E
|
2
|NF
C
re
I
CBO
I
EBO
h
FE
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 1 V, I
C
= 20 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 1 V, I
C
= 20 mA, f = 2 GHz
Noise Figure at V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz, Z
S
= Z
OPT
Reverse Transfer
Capacitance
3
at V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
2
at V
CE
= 1 V, I
C
= 5 mA
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
3. Collector to base capacitance when the emitter is grounded
California Eastern Laboratories

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