鈥?/div>
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
140V / 10A, AF70W
Output Applications
Large current capacitance.
Wide ASO and high durability against breakdown.
Adoption of MBIT process.
Specifications
Note*( ) : 2SA2062
Absolute Maximum Ratings
at Ta=25擄C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25擄C
Conditions
Ratings
(-)160
(-)140
(-)6
(-)10
(-)20
2.5
110
150
-55 to +150
Unit
V
V
V
A
A
W
W
擄C
擄C
Electrical Characteristics
at Ta=25擄C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Base-to-Emitter Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE(1)
hFE(2)
fT
Cob
VBE
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=(--)160V, IE=0
VEB=(--)4V, IC=0
VCE=(--)5V, IC=(--)1A
VCE=(--)5V, IC=(--)5A
VCE=(--)5V, IC=(--)1A
VCB=(--)10V, f=1MHz
VCE=(--)5V, IC=(--)5A
IC=(--)5A, IB=(--)0.5A
IC=(--)5mA, IE=0
IC=(--)50mA, RBE=鈭?/div>
IE=(--)5mA, IC=0
See specified test circuit.
See specified test circuit.
See specified test circuit.
(--)160
(--)140
(--)6
(0.45)0.56
(1.75)3.3
(0.25)0.4
60
35
(10)15
(280)140
1.5
(-
-0.3)0.2
(--)2.0
MHz
pF
V
V
V
V
V
碌s
碌s
碌s
Ratings
min
typ
max
(--)0.1
(--)0.1
160
Unit
mA
mA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1503 TS IM TA-100929 / 62501 TS IM TA-3317, 3318 No.6987-1/4
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