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2SC5761 Datasheet

  • 2SC5761

  • TRANSISTOR | BJT | NPN | 2.3V V(BR)CEO | 35MA I(C) | TSOP

  • 32頁

  • ETC

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DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
2SC5761
NPN SiGe RF TRANSISTOR FOR
LOW NOISE
鈰?/div>
HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
FEATURES
鈥?Ideal for low noise
鈰?/div>
high-gain amplification
NF = 0.9 dB TYP., G
a
= 16.0 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
鈥?Maximum stable power gain: MSG = 20.0 dB TYP. @ V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
鈥?SiGe technology (f
T
= 60 GHz, f
max
= 60 GHz)
鈥?Flat-lead 4-pin thin-type super minimold package
ORDERING INFORMATION
Part Number
2SC5761
2SC5761-T2
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
鈥?8 mm wide embossed taping
鈥?Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25擄C)
擄
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
8.0
2.3
1.2
35
80
150
鈭?5
to +150
Unit
V
V
V
mA
mW
擄C
擄C
T
j
T
stg
2
Note
Mounted on 1.08 cm
脳
1.0 mm (t) glass epoxy substrate
THERMAL RESISTANCE
Parameter
Junction to Case Resistance
Symbol
R
th j-c
Value
150
Unit
擄C/W
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15415EJ1V1DS00 (1st edition)
Date Published May 2001 NS CP(K)
Printed in Japan
漏
2001

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