鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
*
Collector power dissipation
T
a
=
25擄C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
60
60
6
3
6
20
2.0
150
鈭?5
to
+150
擄C
擄C
Unit
V
V
V
A
A
W
2.54
鹵0.30
5.08
鹵0.50
1
2
3
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
C
B
E
Note) *: Non-repetitive peak collector current
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
I
CBO
I
CEO
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
I
C
=
10 mA, I
B
=
0
V
CB
=
60 V, I
E
=
0
V
CE
=
60 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
4 V, I
C
=
1 A
V
CE
=
4 V, I
C
=
3 A
I
C
=
3 A, I
B
=
0.375 A
V
CE
=
10 V, I
C
=
0.1 A, f
=
10 MHz
I
C
=
1 A, Resistance loaded
I
B1
=
0.1 A, I
B2
= 鈭?/div>
0.1 A
V
CC
=
50 V
180
0.2
0.55
0.10
0.3
0.70
0.15
120
40
0.5
V
MHz
碌s
碌s
碌s
Min
60
100
100
1
320
Typ
Max
Unit
V
碌A(chǔ)
碌A(chǔ)
mA
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
120 to 250
P
160 to 320
SJD00288AED
Publication date: February 2003
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