2SC5695
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5695
Horizontal Deflection Output for High Resolution Display,
Color TV
路
路
路
High voltage: V
CBO
= 1500 V
Low saturation voltage: V
CE (sat)
= 3 V (max)
High speed: t
f
(2) = 0.1 碌s (typ.)
Unit: mm
Maximum Ratings
(Tc
=
25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
1500
700
5
22
44
11
200
150
-55~150
Unit
V
V
V
A
A
W
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-21F2A
Electrical Characteristics
(Tc
=
25擄C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE
(1)
DC current gain
h
FE
(2)
h
FE
(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Storage time
Switching time
Fall time
Storage time
Fall time
V
CE (sat)
V
BE (sat)
f
T
C
ob
t
stg
(1)
t
f
(1)
t
stg
(2)
t
f
(2)
Test Condition
V
CB
=
1500 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
I
C
=
10 mA, I
B
=
0
V
CE
=
5 V, I
C
=
2 A
V
CE
=
5 V, I
C
=
10 A
V
CE
=
5 V, I
C
=
17 A
I
C
=
17 A, I
B
=
4.25 A
I
C
=
17 A, I
B
=
4.25 A
V
CE
=
10 V, I
C
=
0.1 A
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
I
CP
=
8 A, I
B1 (end)
=
1.4 A,
f
H
=
64 kHz
I
CP
=
8 A, I
B1 (end)
=
1.1 A,
f
H
=
100 kHz
Weight: 9.75 g (typ.)
Min
戮
戮
700
20
8
4.8
戮
戮
戮
戮
戮
戮
Typ.
戮
戮
戮
戮
戮
戮
戮
1.0
2
280
2.5
0.15
1.6
Max
1
10
戮
50
17
8.3
3
1.5
戮
戮
3
0.3
1.8
0.15
Unit
mA
mA
V
戮
V
V
MHz
pF
ms
戮
0.1
1
2001-10-29
1
2
3
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