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DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5675

NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW NOISE

3-PIN ULTRA SUPER MINIMOLD

FEATURES

鈥?Low voltage operation, low phase distortion

鈥?Ideal for OSC applications

鈥?3-pin ultra super minimold package

ORDERING INFORMATION

Part Number

2SC5675

2SC5675-T1

Quantity

50 pcs (Non reel)

3 kpcs/reel

Supplying Form

鈥?8 mm wide embossed taping

鈥?Pin 3 (Collector) face the perforation side of the tape

Remark

To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T

A

= +25擄C)

擄

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

tot

Note

Ratings

9

5.5

1.5

100

200

150

鈭?5

to +150

Unit

V

V

V

mA

mW

擄C

擄C

T

j

T

stg

2

Note

Mounted on 1.08 cm

脳

1.0 mm (t) glass epoxy substrate

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P15275EJ1V0DS00 (1st edition)

Date Published January 2001 NS CP(K)

Printed in Japan

漏

2001

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