Horizontal Deflection Output Transistor
2SC5657
s
Absolute Maximum Ratings
Unit:mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
I
B
P
C
T
j
Rating
1500
1500
7
8
*3
Unit
4.5
15.5鹵0.5
蠁3.2鹵0.1
10.0
3.0鹵0.3
V
V
V
A
A
A
5擄
26.5鹵0.5
5擄
23.4
22.0鹵0.5
2.0 1.2
5擄
18.6鹵0.5
5擄
5擄
4
2
40
*1
3
*2
4.0
2.0鹵0.2
1.1鹵0.1
2.0
0.7鹵0.1
5.45鹵0.3
3.3鹵0.3
0.7鹵0.1
5.45鹵0.3
5.5鹵0.3
W
擄C
擄C
5擄
150
-55 to +150
1
2
3
*1)TC=25擄C ,*2)Ta=25擄C(Without heat sink)
*3)Non-repetitive peak collector current.
s
Electrical Characteristics(T
C
=25擄C)
Parameter
Collector cutoff current
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation voltage
Symbol
I
CBO
I
CBO
V
EBO
f
FE
V
CE(sat)
V
BE(sat)
f
T
T
stg
T
f
V
F
Conditions
V
CB
=1000V,I
E
=0
V
CB
=1500V,I
E
=0
I
E
=500mA,I
C
=0
V
CE
=5V,I
C
=2A
I
C
=2A,I
B
=0.5A
I
C
=2A,I
B
=0.5A
V
CE
=10V,I
C
=0.1A,f=0.5MHz
I
C
=2A,I
B1
=0.4A,I
B2
=-0.8A
I
C
=2A,I
B1
=0.4A,I
B2
=-0.8A
min
-
-
7
5
-
-
-
-
-
-
typ
-
-
-
-
-
-
3
-
-
-
2.0
TOP-3E
max
50
1
-
9
5
1.5
-
5.0
0.5
-2
Unit
碌A(chǔ)
mA
V
V
V
MHz
碌s
碌s
V
Transition frequency
Storage time
Fall time
Diode characteristics
1
