鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
15
8
3
50
150
150
鈭?5
to
+150
Unit
V
V
V
mA
mW
擄C
擄C
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 2R
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h
FE
ratio
*
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
I
EBO
h
FE
鈭唄
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
=
100
碌A(chǔ),
I
E
=
0
V
EB
=
2 V, I
C
=
0
V
CE
=
4 V, I
C
=
2 mA
h
FE2
: V
CE
=
4 V, I
C
=
100
碌A(chǔ)
h
FE1
: V
CE
=
4 V, I
C
=
2 mA
I
C
=
20 mA, I
B
=
4 mA
V
CE
=
5 V, I
C
=
15 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
0.6
1.1
1.0
1.6
0.1
V
GHz
pF
100
0.6
Min
15
2
350
1.5
Typ
Max
Unit
V
碌A(chǔ)
錚?/div>
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *:
鈭唄
FE
=
h
FE2
/ h
FE1
0 to 0.1
Publication date: February 2003
SJC00186BED
1
1
2
