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2SC5614(NE856M13) Datasheet

  • 2SC5614(NE856M13)

  • Discrete

  • 31頁

  • ETC

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DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5614
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN LEAD-LESS MINIMOLD
FEATURES
鈥?NF = 1.4 dB TYP.,
錚
21e
錚?/div>
2
= 10.0 dB TYP. @ V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
鈥?3-pin lead-less minimold package
ORDERING INFORMATION
Part Number
2SC5614
2SC5614-T3
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
鈥?8 mm wide embossed taping
鈥?Pin 2 (Base) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25擄C)
擄
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
20
12
3.0
100
140
150
鈭?5
to +150
Unit
V
V
V
mA
mW
擄C
擄C
T
j
T
stg
2
Note
Mounted on 1.08 cm
脳
1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10080EJ02V0DS (2nd edition)
Date Published March 2002 CP(K)
Printed in Japan
The mark
鈥?/div>
shows major revised points.
漏
NEC Corporation 2001
漏
NEC Compound Semiconductor Devices 2002

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