2SC5575
Transistors
High-voltage Switching Transisitor
(Power Supply) (120V, 7A)
2SC5575
!Features
1) Low V
CE(sat).
(Typ. 0.17V at I
C
/ I
B
= 5 / 0.5A)
2) Fast switching. (tf : Typ. 0.18碌s at I
C
= 5A)
3) Wide SOA. (safe operating area)
!External
dimensions
(Units : mm)
10.0
4.5
蠁
3.2
2.8
!Absolute
maximum ratings
(Ta = 25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
250
120
12
7
15
2
25
150
鈭?5 鈭?+150
Unit
V
V
V
A
A(t=100ms)
W
W(Tc=25擄C)
擄C
擄C
15.0
12.0
8.0
5.0
1.2
14.0
1.3
0.8
2.54
2.54
(1) (2) (3)
(1) (2) (3)
0.75
2.6
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
ROHM : TO-220FN
!Packaging
specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SC5575
TO-220FN
E
鈭?/div>
500
!Electrical
characteristics
(Ta = 25擄C)
Parameter
Collector-emitter breakdown voltage
Collector cutoff current
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
transfer ratio
Symbol
V
CEX(SUS)
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
Min.
125
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
100
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
20
150
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
Max.
鈭?/div>
10
10
0.6
1.2
200
鈭?/div>
鈭?/div>
0.5
2.5
0.5
2
Unit
V
碌A(chǔ)
碌A(chǔ)
V
V
鈭?/div>
MHz
pF
碌s
碌s
碌s
mA
V
CB
=100V
V
EB
=12V
I
C
/I
B
=5A/0.5A
I
C
/I
B
=5A/0.5A
V
CE
/I
C
=5V/3A
V
CE
=10V,I
E
=
鈭?.5A
V
CB
=10V,I
E
=0A
, f=1MHz
I
C
=5A,R
L
=10鈩?/div>
I
B1
=鈭捍
B2
=0.5A
V
CC
50V
V
CE
=100V,Ta=125擄C
Conditions
I
CP
=8A,I
B1
=鈭捍
B2
=0.5A,I
C
=5A,L=200碌H clamped
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Collector cutoff current
ton
tstg
tf
I
CEO
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