2SC5574
Transistors
Power Transistor (80V, 4A)
2SC5574
!Features
1) Low saturation voltage.
(Typ. V
CE(sat)
= 0.3V at I
C
/ I
B
=2 / 0.2A)
2) Excellent DC current gain characteristics.
3) Pc = 30W (Tc = 25擄C)
4) Wide SOA (safe operating area).
5) Complements the 2SA2017.
!External
dimensions
(Units : mm)
10.0
4.5
蠁
3.2
2.8
15.0
12.0
8.0
5.0
1.2
14.0
1.3
0.8
2.54
2.54
(1) (2) (3)
(1) (2) (3)
0.75
2.6
!Absolute
maximum ratings
(Ta = 25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Single pulse,
Pw
=
100ms
ROHM : TO-220FN
Unit
V
V
V
A(DC)
A(Pulse)
W
W(Tc=25擄C)
擄C
擄C
*
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
100
80
6
4
6
2
30
150
鈭?5 鈭?+150
!Packaging
specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SC5574
TO-220FN
EFG
鈭?/div>
500
!Electrical
characteristics
(Ta = 25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
transfer ratio
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
Min.
100
80
6
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
100
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
10
60
Max.
鈭?/div>
鈭?/div>
鈭?/div>
10
10
1
1.5
500
鈭?/div>
鈭?/div>
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
V
鈭?/div>
MHz
pF
I
C
=
50碌A(chǔ)
I
C
=
25mA
I
E
=
50碌A(chǔ)
V
CB
=
100V
V
EB
=
6V
I
C
/I
B
=
2A/0.2A
I
C
/I
B
=
2A/0.2A
V
CE
/I
C
=
4V/1A
V
CE
=
12V
, I
E
=
鈭?.2A
, f
=
5MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
鈭?/div>
鈭?/div>
鈭?/div>
Conditions
Transition frequency
Output capacitance
鈭?/div>
Measured using pulse current
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