2SC5531
Transistors
High-Voltage Switching Transistor
(400V, 2A)
2SC5531
!Features
1) Low V
CE(sat)
.
V
CE(sat)
=0.15V (Typ.)
(I
C
/ I
B
=1A / 0.2A)
2) High breakdown voltage.
V
CEO
=400V
3) Fast switching.
tf
鈮?.0碌s
(I
C
=0.8A)
!
External dimensions
(Units : mm)
13.1
3.2
(3) (2) (1)
5.08
2.54
1.24
0.78
8.8
10.1
0.5Min.
ROHM : PSD3
EIAJ : SC-83A
!
Structure
Three-layer, diffused planar type NPN silicon transistor.
!
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
400
400
7
2
4
2
30
150
-55~+150
Unit
V
V
V
A(DC)
A(Pulse)
W
W(Tc=25藲C)
藲C
藲C
*
Collector power dissipation
Junction temperature
Storage temperature
*
Single pulse Pw=10ms
!
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
t
ON
tstg
tf
Min.
400
400
7
-
-
-
-
25
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
10
30
-
-
-
Max.
-
-
-
10
10
1
1.5
50
-
-
1
2.5
1
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
V
-
MHz
pF
碌s
碌s
碌s
I
C
=50碌A(chǔ)
I
C
=1mA
I
E
=50碌A(chǔ)
V
CB
=400V
V
EB
=7V
I
C
/I
B
=1A/0.2A
I
C
/I
B
=1A/0.2A
V
CE
=5V, I
C
=0.1A
V
CE
=10V,I
E
=-0.5A,f=5MHz
V
CB
=10V, I
E
=0A, f=1MHz
I
C
=0.8A, R
L
=250鈩?/div>
I
B1
=-I
B2
=0.08A
V
CC
200V
Refer to measurement circuit diagram
Conditions
*
1
*
1
Measured using pulse current
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SC5531
PSD3
B
-
500
0to0.3
(1) Base
(2) Collector
(3) Emitter
1.3
0.4
1.3
4.5
1
