Power Transistors
2SC5513
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
15.5鹵0.5
4.5
10.0
s
Features
q
q
q
蠁3.2鹵0.1
5擄
26.5鹵0.5
3.0鹵0.3
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide area of safe operation (ASO)
(T
C
=25藲C)
Ratings
1500
1500
600
5
20
11
3.5
40
3
150
鈥?5 to +150
Unit
V
V
V
V
A
A
A
W
藲C
藲C
5擄
23.4
22.0鹵0.5
2.0 1.2
5擄
18.6鹵0.5
5擄
5擄
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
4.0
2.0鹵0.2
1.1鹵0.1
2.0
0.7鹵0.1
5.45鹵0.3
3.3鹵0.3
0.7鹵0.1
5.45鹵0.3
5.5鹵0.3
5擄
1
2
3
2.0
1:Base
2:Collector
3:Emitter
TOP鈥?E Full Pack Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1500V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 5.5A
I
C
= 5.5A, I
B
= 1.38A
I
C
= 5.5A, I
B
= 1.38A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 5.5A, I
B1
= 1.38A, I
B2
= 鈥?.76A
3
2.7
0.2
5
min
typ
max
50
1
50
10
3
1.5
V
V
MHz
碌s
碌s
Unit
碌A(chǔ)
mA
碌A(chǔ)
1
1
2
