2SC5511
Transistors
High-voltage Switching
(Audio output amplifier transistor,
TV velocity modulation transistor)
(160V, 1.5A)
2SC5511
!
Features
1) Flat DC current gain characteristics.
2) High breakdown voltage. (BV
CEO
= 160V)
3) High f
T
. (Typ. 150MHz)
4) Wide SOA (safe operating area).
5) Complements the 2SA2005.
!
External dimensions
(Units : mm)
10.0
4.5
蠁
3.2
2.8
15.0
12.0
8.0
5.0
1.2
14.0
1.3
0.8
!
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
160
160
5
1.5
2
20
150
鈭?5~+150
Unit
V
V
V
A
W
W (Tc = 25擄C)
擄C
擄C
2.54
2.54
(1) (2) (3)
(1) (2) (3)
0.75
2.6
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
ROHM : TO-220FN
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit
2SC5511
TO-220FN
DE
-
500
!
Electrical characteristics
(Ta = 25擄C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
160
160
5
鈭?/div>
鈭?/div>
鈭?/div>
60
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
150
35
Max.
鈭?/div>
鈭?/div>
鈭?/div>
1
1
1
200
鈭?/div>
鈭?/div>
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
鈭?/div>
MHz
pF
Conditions
I
C
= 1mA
I
C
= 50碌A(chǔ)
I
E
= 50碌A(chǔ)
V
CB
= 160V
V
EB
= 4V
I
C
/I
B
= 1A/0.1A
V
CE
= 5V , I
C
= 0.1A
V
CE
= 10V , I
E
= 0.2A , f = 100MHz
V
CB
= 10V , I
E
= 0A , f = 1MHz
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